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ON Semiconductor FDMC6675BZ-T
INTEGRATED CIRCUIT
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 25A, 5V
- Power Dissipation (Max)
- 125W (Tc)
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- D2PAK-3
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 5V
- Vgs (Max)
- ±15V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4.9nF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 5V