Images are for reference only. See Product Specifications for product details
ON Semiconductor FDMC4435BZ-F126
MOSFET P-CH 30V 8.5A
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.8W (Ta), 29W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-PQFN (3x3)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Ta), 20A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 35µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 115mOhm @ 6.3A, 10V