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ON Semiconductor FDG6303N_G
INTEGRATED CIRCUIT
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 123mOhm @ 2.9A, 4.5V
- Supplier Device Package
- 6-MicroFET (2x2)
- Series
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs
- 3nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 220pF @ 15V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 2.9A
- Part Status
- Obsolete
- Power - Max
- 650mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-VDFN Exposed Pad