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ON Semiconductor FDD10N20LZTM
MOSFET N-CH 200V 7.6A DPAK-3
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.86
- Stock
- 2505
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- D-PAK (TO-252AA)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 47nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 660pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 3.4A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 79W (Tc)