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ON Semiconductor FDC658P
MOSFET P-CH 30V 4A SSOT-6
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.59
- Stock
- 2
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 240mOhm @ 2A, 4.5V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 2.5nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1V @ 250µA