ON Semiconductor FDBL0110N60

Product Details

FET Type

N-Channel

Power Dissipation (Max)

300W (Tc)

Packaging

Tape & Reel (TR)

Supplier Device Package

H²PAK

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-3, D²Pak (2 Leads + Tab) Variant

Base Part Number

STH270

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

Automotive, AEC-Q101, STripFET™ III

Rds On (Max) @ Id, Vgs

1.7mOhm @ 80A, 10V