ON Semiconductor FDB2614

Product Details

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Base Part Number

STB10N9

Vgs(th) (Max) @ Id

5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

SuperMESH5™

Rds On (Max) @ Id, Vgs

800mOhm @ 4A, 10V

FET Type

N-Channel

Power Dissipation (Max)

130W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

D2PAK