ON Semiconductor FCU850N80Z

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

8.9nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.9A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3Ohm @ 1.1A, 10V

Series

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-251AA