ON Semiconductor FCPF190N65S3R0L

Product Details

Rds On (Max) @ Id, Vgs

600mOhm @ 3.5A, 10V

Series

E

Power Dissipation (Max)

31W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220 Full Pack

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)