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ON Semiconductor FCP25N60N-F102
MOSFET N-CH 600V 25A TO220-3
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 3.26
- Stock
- 0
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 73nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4530pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 40mOhm @ 30A, 10V
- Series
- Trench™
- Power Dissipation (Max)
- 500W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (IXTA)