ON Semiconductor FCP190N65S3

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Series

E

Power Dissipation (Max)

147W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263 (D²Pak)

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

937pF @ 100V