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ON Semiconductor FCH190N65F-F085
MOSFET N-CH 650V 20.6A TO247
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 4.61
- Stock
- 0
Product Details
- Series
- CoolMOS™
- Supplier Device Package
- PG-TO247-3
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 94nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2400pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 340mOhm @ 9.2A, 10V
- Power Dissipation (Max)
- 208W (Tc)