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ON Semiconductor FCH040N65S3-F155

MOSFET N-CH 650V 65A TO247-3

Manufacturer
ON Semiconductor
Datasheet
Price
8.32
Stock
97

Product Details

FET Type
P-Channel
Supplier Device Package
TO-268
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
103nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
200V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5400pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
85mOhm @ 24A, 10V
Series
PolarP™
Power Dissipation (Max)
462W (Tc)