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ON Semiconductor EFC6602R-TR
MOSFET 2N-CH EFCP
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 20V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 345pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 4A, 3A
- Part Status
- Obsolete
- Power - Max
- 1.2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 4A, 4.5V
- Supplier Device Package
- 8-EMH
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 4.7nC @ 4.5V