ON Semiconductor BS170-D74Z

Product Details

Package / Case

3-XFDFN

Vgs(th) (Max) @ Id

950mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

450mOhm @ 300mA, 4.5V

Series

-

Power Dissipation (Max)

360mW (Ta), 3.125W (Tc)

FET Type

P-Channel

Supplier Device Package

DFN1006B-3

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

1.9nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

127pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount