ON Semiconductor ATP106-TL-H

Product Details

Vgs(th) (Max) @ Id

4.5V @ 200µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.4Ohm @ 1A, 10V

Series

SuperFET® II

Power Dissipation (Max)

32W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63