ON Semiconductor 5HP01M-TL-H

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TO220-3-1

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

15750pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 140µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.8mOhm @ 100A, 10V

Series

Automotive, AEC-Q101, OptiMOS™

Power Dissipation (Max)

188W (Tc)