ON Semiconductor 2SK4177-DL-1E

Product Details

Rds On (Max) @ Id, Vgs

60mOhm @ 38A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.1W (Ta), 170W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-262

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2780pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)