ON Semiconductor 2SK3820-DL-1E

Product Details

FET Type

N-Channel

Supplier Device Package

TO-263-2

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Series

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)