ON Semiconductor 2N7002_S00Z

Product Details

Series

-

Power Dissipation (Max)

360mW (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-23-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

1.3nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

50V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

73pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

130mA (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10Ohm @ 100mA, 5V