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ON Semiconductor 1N916B_T50R
DIODE GEN PURP 100V 200MA DO35
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 4ns
- Current - Reverse Leakage @ Vr
- 5µA @ 75V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Series
- -
- Current - Average Rectified (Io)
- 200mA
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 10mA
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- DO-204AH, DO-35, Axial
- Base Part Number
- 1N916
- Capacitance @ Vr, F
- 2pF @ 0V, 1MHz
- Supplier Device Package
- DO-35