NXP USA Inc. PSMN7R0-40LS,115

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

0.89nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.28A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Vgs(th) (Max) @ Id

950mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

300mOhm @ 200mA, 4.5V

Series

TrenchMOS™

Power Dissipation (Max)

2.5W (Tc)

FET Type

N-Channel

Supplier Device Package

DFN1006-3