NXP USA Inc. PSMN1R9-25YLC,115

Product Details

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

520mA (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

5V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-65°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10Ohm @ 150mA, 5V

Series

TrenchMOS™

Power Dissipation (Max)

6.25W (Tc)

FET Type

N-Channel

Supplier Device Package

SC-73

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

100V