NXP USA Inc. PSMN040-200W,127

Product Details

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9mOhm @ 12.5A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

2.5W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SO

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

-

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)