NXP USA Inc. PSMN011-30YL,115

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

78A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

2.15V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

6.1mOhm @ 20A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

63W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

21.3nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1226pF @ 15V