NXP USA Inc. PMV20XN,215

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

137mOhm @ 5A, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

8W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-223

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

5.3nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

55V