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NXP USA Inc. PMV16UN,215
MOSFET N-CH 20V 5.8A SOT23
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 8Ohm @ 100mA, 2.8V
- Series
- -
- Power Dissipation (Max)
- 350mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TO-92-3
- Packaging
- Tape & Box (TB)
- Drain to Source Voltage (Vdss)
- 200V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 250mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2V, 2.8V
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vgs(th) (Max) @ Id
- 1.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)