NXP USA Inc. PMPB16XN,115

Product Details

Rds On (Max) @ Id, Vgs

8.2mOhm @ 6A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

FET Type

P-Channel

Supplier Device Package

PowerPAK® ChipFet Single

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

105nC @ 8V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

PowerPAK® ChipFET™ Single

Vgs(th) (Max) @ Id

900mV @ 250µA

Operating Temperature

-50°C ~ 150°C (TJ)