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NXP USA Inc. PMDPB95XNE,115
MOSFET 2N-CH 30V 2.4A HUSON6
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.2V @ 1mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 98mOhm @ 20A, 20V
- Supplier Device Package
- SP3
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 49nC @ 20V
- FET Type
- 4 N-Channel (Three Level Inverter)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 950pF @ 1000V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 28A (Tc)
- Part Status
- Active
- Power - Max
- 125W
- Mounting Type
- Chassis Mount
- Package / Case
- SP3