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NXP USA Inc. PMDPB28UN,115
MOSFET 2N-CH 20V 4.6A HUSON6
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 4.4nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 20V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 268pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Part Status
- Obsolete
- Power - Max
- 510mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 46mOhm @ 3A, 4.5V
- Supplier Device Package
- DFN2020-6