NXP USA Inc. PHU66NQ03LT,127

Product Details

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

9mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

107W (Tc)

FET Type

N-Channel

Supplier Device Package

I-PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)