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NXP USA Inc. PHM15NQ20T,518
MOSFET N-CH 200V 17.5A 8HVSON
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 75mOhm @ 12A, 10V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 62.5W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-HVSON (6x5)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 26.4nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1150pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 19A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)