NXP USA Inc. PHK4NQ10T,518

Product Details

Mounting Type

Surface Mount

Package / Case

8-VDFN Exposed Pad

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

55mOhm @ 15A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

62.5W (Tc)

FET Type

N-Channel

Supplier Device Package

8-HVSON (6x5)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

36.2nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2080pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22.2A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V