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NXP USA Inc. PHK12NQ10T,518
MOSFET N-CH 100V 11.6A SOT96-1
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 880pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 4A, 10V