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NXP USA Inc. PHD18NQ10T,118
MOSFET N-CH 100V 18A DPAK
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 25A, 10V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 166W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3100pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 47A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 1mA