NXP USA Inc. PHD16N03T,118

Product Details

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

40mOhm @ 17A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

136W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1704pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount