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NXP USA Inc. PHD108NQ03LT,118
MOSFET N-CH 25V 75A DPAK
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- DPAK
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 5.2nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 180pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13.1A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 13A, 10V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 32.6W (Tc)