NXP USA Inc. PHB146NQ06LT,118

Product Details

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5.7mOhm @ 15A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

62.5W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

23.5nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1972pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669