NXP USA Inc. PH4530L,115

Product Details

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

15mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Drain to Source Voltage (Vdss)

100V