NXP USA Inc. BUK9E4R4-40B,127

Product Details

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

16.9mOhm @ 15A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

41.6W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK56, Power-SO8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 4.5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount