NXP USA Inc. BUK9E3R2-40E,127

Product Details

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3.4mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

293W (Tc)

FET Type

N-Channel

Supplier Device Package

I2PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

95nC @ 5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

13490pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA