NXP USA Inc. BUK9E2R8-60E,127

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

69.5nC @ 5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

9150pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.8mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

234W (Tc)

FET Type

N-Channel

Supplier Device Package

I2PAK