Nexperia USA Inc. PSMN7R0-100BS,118

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

900V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.3Ohm @ 2.7A, 10V

Series

QFET®

Power Dissipation (Max)

3.13W (Ta), 158W (Tc)

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V