Nexperia USA Inc. PSMN6R1-25MLDX

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

3.9mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

3W (Ta), 25W (Tc)

FET Type

N-Channel

Supplier Device Package

8-HSOP

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V