Nexperia USA Inc. PSMN5R0-30YL,115

Product Details

Vgs (Max)

±5V

Drain to Source Voltage (Vdss)

8V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

78mOhm @ 2A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

2.5W (Ta), 2.78W (Tc)

FET Type

P-Channel

Supplier Device Package

SC-70-6 (SOT-363)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V