Nexperia USA Inc. PSMN4R4-80BS,118

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

142nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 180A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

3-WDSON

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.5mOhm @ 30A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

FET Type

N-Channel

Supplier Device Package

MG-WDSON-2, CanPAK M™