Nexperia USA Inc. PSMN3R5-40YSDX

Product Details

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4620pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

17.3A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 13A, 10V

Series

TrenchFET®

Power Dissipation (Max)

3.1W (Ta), 6.9W (Tc)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

153nC @ 10V