Nexperia USA Inc. PSMN1R8-30BL,118

Product Details

Vgs (Max)

±18V

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

Part Status

Not For New Designs

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Package / Case

TO-220-3

Base Part Number

STP20N

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

STripFET™ II

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

FET Type

N-Channel

Power Dissipation (Max)

60W (Tc)

Packaging

Tube

Supplier Device Package

TO-220AB