Nexperia USA Inc. PSMN1R4-30YLDX

Product Details

FET Type

P-Channel

Supplier Device Package

D-Pak

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

400V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.1Ohm @ 1.35A, 10V

Series

QFET®

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)