Nexperia USA Inc. PSMN057-200B,118

Product Details

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 4.5V

Series

-

Power Dissipation (Max)

2W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SOP

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V